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| PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-30 30 W L-S BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. thermal characteristics, and reliability. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. The device employs 0.9 m Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, FEATURES * Push-pull type N-channel GaAs MES FET * High output power * High linear gain : 30 W TYP. : 13 dB TYP. * High power added efficiency : 40 % TYP. @VDS = 10 V, IDset = 4 A, f = 2.2 GHz ORDERING INFORMATION (PLAN) Part Number NES1823P-30 T-86 Package Supplying Form - Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NES1823P-30) ABSOLUTE MAXIMUM RATINGS (TA = +25C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGSO VGDO ID IG PT Tch Tstg Ratings 15 -7 -18 27 180 90 Note Unit V V V A mA W C C 175 -65 to +175 Note TC = 25C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14491EJ1V0DS00 (1st edition) Date Published October 1999 N CP(K) Printed in Japan (c) 1999 NES1823P-30 RECOMMENDED OPERATING LIMITS Parameter Drain to Source Voltage Gain Compression Channel Temperature Set Drain Current Gate Resistance Note Symbol VDS Gcomp Tch IDset Rg Test Condition MIN. - - - TYP. - - - - - MAX. 10.0 3.0 +150 5.0 30 Unit V dB C A VDS = 10 V, RF OFF - - Note Rg is the series resistance between the gate supply and FET gate. ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Saturated Drain Current Pinch-off Voltage Thermal Resistance Output Power Drain Current Power Added Efficiency Linear Gain Note 1 Symbol IDSS Vp Rth Pout ID Test Conditions VDS = 2.5 V, VGS = 0 V VDS = 2.5 V, ID = 80 mA Channel to Case f = 2.2 GHz, VDS = 10 V Pin = +36 dBm, Rg = 30 Note 2 IDset = 4.0 A Total (RF OFF) MIN. - -4.0 - 44.0 - - 11 TYP. 18.0 -2.6 1.3 45.0 7 40 13 -40 MAX. - - 1.7 - 9 - - - Unit A V C/W dBm A % dB dBc add GL IM3 3rd order Intermodulation Distortion f = +5 MHz, Pout = 37 dBm (2-tone total) - Notes 1. Pin = +20 dBm 2. IDset = 2.0 A each drain 2 Preliminaly Data Sheet P14491EJ1V0DS00 NES1823P-30 TYPICAL CHARACTERISTICS (TA = +25C) OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER 50 VDS = 10 V IDset = 4.0 A Rg = 30 f = 2.2 GHz f = 5 MHz 45 Output Power Pout (dBm) 100 Pout Power Added Efficiency add (%) 80 40 60 add 35 40 30 20 25 15 20 25 30 35 40 Input Power Pin (dBm) 0 3RD INTERMODULATION DISTORTION vs. 2 TONE OUTPUT POWER 0 VDS = 10 V IDset = 4.0 A Rg = 30 f = 2.2 GHz f = 5 MHz -10 3rd Intermodulation Distortion IM3 (dBc) -20 -30 -40 -50 -60 30 35 40 45 2 Tone Output Power 2tonePout (dBm) Preliminaly Data Sheet P14491EJ1V0DS00 3 NES1823P-30 S-PARAMETERS VDS = 10 V, IDset = 2 A (each drain) START 1 GHz, STOP 3 GHz, STEP 40 MHz Marker 1: 1.8 GHz 2: 1.95 GHz 3: 2.1 GHz 4: 2.2 GHz S11 1.0 0.5 2 1 43 0 0.5 1 2 S12 +90 2.0 +135 +45 180 1 2 4 3 -45 -90 0 -0.5 -1.0 -2.0 -135 Rmax. = 1 Rmax. = 0.05 S21 +90 0.5 +135 +45 S22 1.0 2.0 4 2 180 1 3 4 0 0 3 2 1 0.5 1 2 -135 -90 -45 -0.5 -1.0 -2.0 Rmax. = 5 Rmax. = 1 4 Preliminaly Data Sheet P14491EJ1V0DS00 NES1823P-30 S-PARAMETERS VDS = 10 V, IDset = 2 A (each drain) FREQUENCY GHz MAG. S11 ANG. (deg.) 1.000 1.040 1.080 1.120 1.160 1.200 1.240 1.280 1.320 1.360 1.400 1.440 1.480 1.520 1.560 1.600 1.640 1.680 1.720 1.760 1.800 1.840 1.880 1.920 1.960 2.000 2.040 2.080 2.120 2.160 2.200 2.240 2.280 2.320 2.360 2.400 2.440 2.480 2.520 2.560 2.600 2.640 2.680 2.720 2.760 2.800 2.840 2.880 2.920 2.960 3.000 0.947 0.945 0.940 0.938 0.934 0.930 0.925 0.920 0.919 0.912 0.906 0.901 0.894 0.886 0.877 0.867 0.855 0.840 0.825 0.809 0.787 0.758 0.730 0.696 0.661 0.632 0.612 0.611 0.628 0.657 0.690 0.723 0.747 0.770 0.787 0.799 0.808 0.815 0.813 0.817 0.814 0.811 0.809 0.803 0.796 0.789 0.786 0.779 0.775 0.771 0.768 162.6 160.9 159.3 157.6 155.8 154.1 152.1 150.5 148.5 146.6 144.4 142.6 140.7 138.7 136.7 134.7 132.9 131.0 129.1 127.4 125.9 124.5 123.5 123.2 123.8 125.8 128.7 132.4 135.6 137.7 138.6 138.6 137.9 136.9 135.8 134.6 133.5 132.4 131.3 130.0 129.1 128.1 127.3 126.3 125.6 124.6 123.7 123.0 122.2 121.4 120.3 1.080 1.069 1.054 1.042 1.051 1.032 1.050 1.051 1.068 1.079 1.102 1.132 1.168 1.200 1.235 1.290 1.326 1.364 1.404 1.472 1.525 1.583 1.659 1.718 1.829 1.833 1.863 1.830 1.770 1.393 1.465 1.425 1.211 1.143 0.979 0.911 0.834 0.737 0.719 0.610 0.651 0.552 0.549 0.488 0.486 0.454 0.423 0.411 0.386 0.396 0.357 MAG. S21 ANG. (deg.) 61.6 60.8 58.4 57.2 54.8 53.0 51.9 49.1 48.0 44.8 43.8 40.5 38.3 34.5 31.6 28.3 23.1 20.0 14.8 11.4 4.6 1.0 -6.7 -11.5 -20.3 -29.9 -38.4 -49.8 -57.4 -70.7 -76.7 -86.2 -92.2 -98.0 -103.7 -104.8 -111.1 -111.5 -116.5 -117.0 -119.9 -123.6 -124.4 -127.3 -127.7 -131.6 -133.1 -133.8 -135.3 -137.4 -140.5 0.008 0.009 0.009 0.010 0.010 0.010 0.011 0.011 0.011 0.012 0.012 0.013 0.013 0.013 0.014 0.014 0.015 0.015 0.016 0.016 0.017 0.018 0.018 0.018 0.019 0.019 0.018 0.017 0.015 0.014 0.012 0.010 0.009 0.008 0.007 0.006 0.006 0.007 0.007 0.007 0.007 0.008 0.008 0.009 0.009 0.010 0.011 0.012 0.013 0.014 0.015 MAG. S12 ANG. (deg.) 29.0 29.2 27.2 26.4 25.5 24.2 23.6 21.0 20.3 16.7 15.9 13.0 12.4 9.3 5.9 3.8 -0.3 -4.0 -9.0 -12.9 -19.6 -25.5 -33.0 -40.7 -50.0 -61.0 -72.8 -85.1 -99.4 -112.1 -125.7 -138.2 -154.3 -168.9 176.2 160.1 150.4 132.1 126.2 113.5 109.1 101.0 96.3 92.6 87.1 85.6 81.3 77.4 76.4 71.5 71.2 0.821 0.818 0.816 0.811 0.809 0.805 0.804 0.800 0.796 0.792 0.789 0.786 0.783 0.779 0.776 0.773 0.769 0.770 0.771 0.768 0.771 0.776 0.780 0.793 0.813 0.833 0.857 0.881 0.897 0.911 0.918 0.918 0.924 0.919 0.916 0.908 0.906 0.896 0.895 0.890 0.885 0.881 0.875 0.871 0.867 0.864 0.857 0.854 0.848 0.845 0.838 MAG. S22 ANG. (deg.) 174.6 174.1 173.7 173.0 172.6 171.9 171.2 170.6 170.0 169.2 168.6 168.0 167.2 166.5 165.9 165.3 164.9 164.5 164.2 164.0 163.9 163.7 164.0 164.0 163.9 163.7 162.8 161.6 160.0 158.2 156.7 155.1 153.5 152.3 151.5 150.4 149.7 149.1 148.5 148.1 147.8 147.3 147.1 146.8 146.4 146.0 145.9 145.5 145.1 144.6 144.3 Preliminaly Data Sheet P14491EJ1V0DS00 5 NES1823P-30 PACKAGE DIMENSIONS (UNIT: mm) 2.4 0.3 45 R1.2 0.3 G1 G2 11.4 0.3 S S D1 G1, G2: Gate D1, D2: Drain S: Source D2 1.4 0.2 7.8 0.2 14.5 0.3 20.9 0.3 2.4 0.2 24.5 0.3 0.1 6 Preliminaly Data Sheet P14491EJ1V0DS00 1.8 0.2 4.7 MAX. 19.4 0.4 5.7 0.3 NES1823P-30 RECOMMENDED MOUNTING CONDITION FOR CORRECT USE (1) Fix to a heatsink or mount surface completely with screw at the four holes of the flange. (2) Recommended torque strength of the screw is 3 kgF typical using M2.3 type screw. (3) Recommended flatness of the mount surface is less than 10 m. (roughness of surface is ) RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Partial Heating Soldering Conditions Pin temperature: 260C Time: 5 seconds or less (per pin row) Recommended Condition Symbol - For details of recommended soldering conditions, please contact your local NEC sales office. Preliminaly Data Sheet P14491EJ1V0DS00 7 NES1823P-30 CAUTION The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. * The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8 |
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